Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices

Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices

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The paper investigates the terahertz performance of a mutually injection-locked multi-element high electron mobility avalanche transit time (HEM-ATT) source based on AlGaN/GaN two-dimensional electron gas (2-DEG).Utilizing a nanostrip patch type planar coupling circuit, mutual injection locking between adjacent elements is achieved.The paper provides a comprehensive analysis of the integrated power combining technique Heavy Duty Transport Wheelchairs in the mutually injection-locked multi-element HEM-ATT oscillator.

A ten-element mutually injection-locked integrated power combined source is designed for operation at 1.0 THz, and simulation studies are conducted to examine its DC, large-signal, and avalanche noise characteristics.The capability of generating a narrow-band terahertz wave is verified by introducing various levels of structural mismatches between the elements.

Results indicate that the ten-element HEM-ATT oscillator can deliver 2.27 W peak power with a 17% DC to THz conversion efficiency at 1.0 THz.

The average noise measure of the oscillator is found to be 12.54 dB.Additionally, the terahertz performance Super Pump Parts of the mutually injection-locked ten-element HEM-ATT oscillator is compared with other state-of-the-art THz sources to evaluate its potentiality as an excellent integrated THz radiator.